Abstract: Electrochemical devices have attracted attention due to their low cost and simplicity, but significant improvements in their sensitivities are still needed for use with clinical samples. Wide band-gap group III nitride compound semiconductors (GaN/AlGaN materials system) are alternative options to supplement silicon in these applications because of their chemical inertness, high temperature/high power capability, high electron saturation velocity and simple integration with existing GaN based UV light emitting diode, UV detectors and wireless communication chips. The conducting 2DEG channel of AlGaN/GaN HEMTs is very close to the surface and extremely sensitive to adsorption of analytes. HEMTs sensors can therefore be used for detecting gases, ions, pH values, proteins, and DNA. This paper gives an overview on the use of GaN /AlGaN heterostructures for DNA biosensor applications.
Keywords: GaN, AlGaN, Heterostructures, DNA Biosensors, HFET.
Title: A Review on the systematic functioning of GaN / AlGaN Semiconductors in context to the DNA Biosensors
Author: Sayan Basak, Vaishali Pande
International Journal of Interdisciplinary Research and Innovations
ISSN 2348-1218 (print), ISSN 2348-1226 (online)
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