Abstract: Ni doped ZnO thin films were successfully deposited on ITO coated glass substrates by sol-gel spin coating method. The effect of film thickness on the structural properties of Ni:ZnO thin films were investigated by means of X-ray diffraction (XRD) and Raman spectroscopy. The XRD study reveals that the deposited Ni:ZnO thin films were crystallized in hexagonal wurtzite crystal structure with preferred orientation along the (002) plane. Two dominant characteristics modes identified at 484 cm-1 and 570 cm-1. The mode assigned at 484 cm-1 is associated with ZnO non-polar high-frequency E2H mode which confirms the hexagonal wurtzite phase of deposited thin films. The Raman mode at 570 cm-1 correspond to the A1(LO) mode and it exhibited a significant red-shift shift from 580 cm-1 to 570 cm-1 which indicates that a large number of defects (i.e., zinc interstitials and oxygen vacancy defect states) were present in the deposited Ni doped ZnO thin films. The characteristics peaks centered at 1090cm-1 and 936 cm-1 are associated with substrate and organic solvent, respectively. The relative change in the intensity of the Raman modes with corresponding film thickness is attributed to the resonance Raman Effect. The prepared Ni doped ZnO thin film will be used for diluted magnetic semiconductors (DMS) applications.
Keywords: Ni:ZnO Thin Films, Optical Material, Thin films, Optoelectronic Devices, Semiconductor Oxide, DMD, Sol-gel.
Title: Raman Analysis of Ni Doped ZnO (Ni:Zno) Thin Films By Sol-Gel Spin Coating System For Device Applications
Author: R.K. Pandey, Swati Mishra, Rashmi Tiwari, M.P. Sharma, P.K. Bajpai
International Journal of Electrical and Electronics Research
ISSN 2348-6988 (online)
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