Abstract: A CAM compares input search data in parallel against a table of stored data and returns the address of the matching data. A BCAM stores and searches only “0”s and “1”s. A TCAM can store and search an additional state, called “don’t care” so that a TCAM can perform partial matching. CAM offers high search speed in a single clock cycle, so CAMs are much faster than other search systems. Therefore CAMs are used in a wide variety of applications. Due to its parallel comparison 46% of power is consumed by the ML sensing structure and 21% of power is consumed by SL sensing Structure, so TCAM is power hungry. As power consumption and search speed are the critical challenges faced by TCAM designs. In this paper different circuit level techniques for ML sensing schemes and SL driving approaches are reviewed.
Keywords: Ternary Content Addressable Memory (TCAM), Binary Content addressable Memory (BCAM), Random Access Memory, NOR-type TCAM, NAND-type TCAM, Hybrid-type TCAM, Match-Line (ML), Search-Line (SL).
Title: Review of Low Power Ml Sensing Schemes of Ternary Content Addressable Memory
Author: Yashaswini H G, Aswatha Kumar M, B N Shobha
International Journal of Electrical and Electronics Research
ISSN 2348-6988 (online)
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